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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
15 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
SPB80P06P
获得报价
RFQ
2,182
有现货
Infineon Technologies MOSFET P-CH 60V 80A D2PAK SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 340W (Tc) P-Channel - 60V 80A (Tc) 23 mOhm @ 64A, 10V 4V @ 5.5mA 173nC @ 10V 5033pF @ 25V 10V ±20V
SSP45N20B_FP001
获得报价
RFQ
1,709
有现货
ON Semiconductor MOSFET N-CH 200V 35A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 176W (Tc) N-Channel - 200V 35A (Tc) 65 mOhm @ 17.5A, 10V 4V @ 250µA 173nC @ 10V 4300pF @ 25V 10V ±30V
SPP80P06PBKSA1
获得报价
RFQ
783
有现货
Infineon Technologies MOSFET P-CH 60V 80A TO-220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 340W (Tc) P-Channel - 60V 80A (Tc) 23 mOhm @ 64A, 10V 4V @ 5.5mA 173nC @ 10V 5033pF @ 25V 10V ±20V
BSC014N03MSGATMA1
获得报价
RFQ
3,904
有现货
Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 30V 30A (Ta), 100A (Tc) 1.4 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC014N03MSGATMA1
获得报价
RFQ
643
有现货
Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 30V 30A (Ta), 100A (Tc) 1.4 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC014N03MSGATMA1
单位
$0.64
获得报价
RFQ
3,164
有现货
Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 30V 30A (Ta), 100A (Tc) 1.4 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC016N03MSGATMA1
获得报价
RFQ
3,106
有现货
Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 30V 28A (Ta), 100A (Tc) 1.6 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC016N03MSGATMA1
单位
$1.77
获得报价
RFQ
3,242
有现货
Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 30V 28A (Ta), 100A (Tc) 1.6 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC016N03MSGATMA1
单位
$0.65
获得报价
RFQ
2,470
有现货
Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 30V 28A (Ta), 100A (Tc) 1.6 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
SPB80P06PGATMA1
获得报价
RFQ
1,522
有现货
Infineon Technologies MOSFET P-CH 60V 80A TO-263 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 340W (Tc) P-Channel - 60V 80A (Tc) 23 mOhm @ 64A, 10V 4V @ 5.5mA 173nC @ 10V 5033pF @ 25V 10V ±20V
SPB80P06PGATMA1
单位
$3.54
获得报价
RFQ
1,886
有现货
Infineon Technologies MOSFET P-CH 60V 80A TO-263 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 340W (Tc) P-Channel - 60V 80A (Tc) 23 mOhm @ 64A, 10V 4V @ 5.5mA 173nC @ 10V 5033pF @ 25V 10V ±20V
SPB80P06PGATMA1
单位
$1.72
获得报价
RFQ
2,836
有现货
Infineon Technologies MOSFET P-CH 60V 80A TO-263 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 340W (Tc) P-Channel - 60V 80A (Tc) 23 mOhm @ 64A, 10V 4V @ 5.5mA 173nC @ 10V 5033pF @ 25V 10V ±20V
SIHG33N65E-GE3
单位
$7.31
获得报价
RFQ
3,387
有现货
Vishay Siliconix MOSFET N-CH 650V 32.4A TO-247AC - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 313W (Tc) N-Channel - 650V 32.4A (Tc) 105 mOhm @ 16.5A, 10V 4V @ 250µA 173nC @ 10V 4040pF @ 100V 10V ±30V
SIHG33N65E-GE3
单位
$4.40
获得报价
RFQ
2,636
有现货
Vishay Siliconix MOSFET N-CH 650V 32.4A TO-247AC - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 313W (Tc) N-Channel - 650V 32.4A (Tc) 105 mOhm @ 16.5A, 10V 4V @ 250µA 173nC @ 10V 4040pF @ 100V 10V ±30V
SPP80P06PHXKSA1
单位
$3.36
获得报价
RFQ
3,636
有现货
Infineon Technologies MOSFET P-CH 60V 80A TO-220 SIPMOS® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 340W (Tc) P-Channel - 60V 80A (Tc) 23 mOhm @ 64A, 10V 4V @ 5.5mA 173nC @ 10V 5033pF @ 25V 10V ±20V
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