- 零件状态 :
- 25°C时的电流-连续漏极（Id） :
- Rds开启（最大）@Id，Vgs :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
9 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,548
有现货
|
NXP USA Inc. | MOSFET N-CH 30V 51A LFPAK | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 49W (Tc) | N-Channel | - | 30V | 51A (Tj) | 10.7 mOhm @ 15A, 10V | 2.15V @ 1mA | 14.8nC @ 10V | 726pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,178
有现货
|
NXP USA Inc. | MOSFET N-CH 30V 51A LFPAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 49W (Tc) | N-Channel | - | 30V | 51A (Tj) | 10.7 mOhm @ 15A, 10V | 2.15V @ 1mA | 14.8nC @ 10V | 726pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,739
有现货
|
NXP USA Inc. | MOSFET N-CH 30V 51A LFPAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 49W (Tc) | N-Channel | - | 30V | 51A (Tj) | 10.7 mOhm @ 15A, 10V | 2.15V @ 1mA | 14.8nC @ 10V | 726pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,508
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
908
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
645
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,397
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 36W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,445
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 36W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,674
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 36W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V |
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