- 漏极-源极电压（Vdss） :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
17 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,083
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 23A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 545W (Tc) | N-Channel | 1000V | 23A (Tc) | 380 mOhm @ 18A, 10V | - | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,863
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 26A SOT227 | POWER MOS 8™ | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 543W (Tc) | N-Channel | 1000V | 26A (Tc) | 396 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 7868pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,506
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 26A SOT227 | POWER MOS 8™ | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 543W (Tc) | N-Channel | 1000V | 26A (Tc) | 396 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 7868pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,039
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 23A SP1 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 | 390W (Tc) | N-Channel | 1000V | 23A (Tc) | 396 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 7868pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,497
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 23A SP1 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 | 390W (Tc) | N-Channel | 1000V | 23A (Tc) | 396 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 7868pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
615
有现货
|
IXYS | MOSFET N-CH 1000V 37A SOT-227B | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 890W (Tc) | N-Channel | 1000V | 37A (Tc) | 220 mOhm @ 22A, 10V | 6.5V @ 1mA | 305nC @ 10V | 19000pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,969
有现货
|
Microsemi Corporation | MOSFET N-CH 800V 47A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 800V | 47A (Tc) | 210 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,238
有现货
|
IXYS | MOSFET N-CH 1000V 22A I5-PAK | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ | 357W (Tc) | N-Channel | 1000V | 22A (Tc) | 240 mOhm @ 22A, 10V | 6.5V @ 1mA | 305nC @ 10V | 19000pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,073
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 35A TO264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 1135W (Tc) | N-Channel | 1000V | 35A (Tc) | 400 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,030
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 35A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 1000V | 35A (Tc) | 380 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,718
有现货
|
IXYS | MOSFET N-CH 1000V 44A PLUS264 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | PLUS264™ | 1250W (Tc) | N-Channel | 1000V | 44A (Tc) | 220 mOhm @ 22A, 10V | 6.5V @ 1mA | 305nC @ 10V | 19000pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,143
有现货
|
Microsemi Corporation | MOSFET N-CH 800V 44A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1135W (Tc) | N-Channel | 800V | 47A (Tc) | 240 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,575
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 545W (Tc) | N-Channel | 1000V | 25A (Tc) | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,254
有现货
|
Microsemi Corporation | MOSFET N-CH 800V 48A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 800V | 49A (Tc) | 190 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,075
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 37A T-MAX | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 1000V | 37A (Tc) | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
790
有现货
|
Microsemi Corporation | MOSFET N-CH 800V 48A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 1135W (Tc) | N-Channel | 800V | 49A (Tc) | 200 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,759
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 37A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1135W (Tc) | N-Channel | 1000V | 37A (Tc) | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V |
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