- 包装材料 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
8 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,204
有现货
|
Microsemi Corporation | MOSFET N-CH 100V 144A ISOTOP | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 450W (Tc) | N-Channel | - | 100V | 144A (Tc) | - | 4V @ 2.5mA | 450nC @ 10V | 10300pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,223
有现货
|
Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,184
有现货
|
Microsemi Corporation | MOSFET N-CH 100V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ | 520W (Tc) | N-Channel | - | 100V | 100A (Tc) | 11 mOhm @ 500mA, 10V | 4V @ 2.5mA | 450nC @ 10V | 10300pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,844
有现货
|
Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
933
有现货
|
Infineon Technologies | MOSFET N-CH 40V 195A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Short Leads, I²Pak | TO-262 | 375W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,482
有现货
|
ON Semiconductor | MOSFET N-CH 40V 100A TO-3PN | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 306W (Tc) | N-Channel | - | 40V | 30A (Ta), 100A (Tc) | 2.1 mOhm @ 80A, 10V | 3V @ 250µA | 450nC @ 10V | 24740pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,295
有现货
|
Infineon Technologies | MOSFET N-CH 40V 195A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 375W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.3 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,076
有现货
|
ON Semiconductor | MOSFET N-CH 40V 100A TO-220 | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 306W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.2 mOhm @ 80A, 10V | 3V @ 250µA | 450nC @ 10V | 24740pF @ 25V | 4.5V, 10V | ±20V |
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