4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
1,883
有现货
|
Infineon Technologies | MOSFET N-CH 650V 13.4A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 156W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,395
有现货
|
Infineon Technologies | MOSFET N-CH 650V 13.4A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 156W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,558
有现货
|
Infineon Technologies | MOSFET N-CH 650V 13.4A TO-247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V | |||
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获得报价 |
2,868
有现货
|
Infineon Technologies | MOSFET N-CH 650V 13.4A TO220-FP | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 34W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V |