- 系列 :
- 零件状态 :
- 功耗(最大) :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,155
有现货
|
Infineon Technologies | MOSFET P-CH 30V 12.5A TDSON-8 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 63W (Tc) | P-Channel | - | 30V | 9.9A (Ta), 12.5A (Tc) | 20 mOhm @ 12.5A, 10V | 2.2V @ 100µA | 48.5nC @ 10V | 2430pF @ 15V | 10V | ±25V | |||
|
获得报价 |
2,563
有现货
|
Infineon Technologies | MOSFET P-CH 30V 12.5A TDSON-8 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 63W (Tc) | P-Channel | - | 30V | 9.9A (Ta), 12.5A (Tc) | 20 mOhm @ 12.5A, 10V | 2.2V @ 100µA | 48.5nC @ 10V | 2430pF @ 15V | 10V | ±25V | |||
|
获得报价 |
1,927
有现货
|
Infineon Technologies | MOSFET P-CH 30V 12.5A TDSON-8 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 63W (Tc) | P-Channel | - | 30V | 9.9A (Ta), 12.5A (Tc) | 20 mOhm @ 12.5A, 10V | 2.2V @ 100µA | 48.5nC @ 10V | 2430pF @ 15V | 10V | ±25V | |||
|
获得报价 |
1,937
有现货
|
Infineon Technologies | MOSFET N-CH 30V 184A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 125W (Tc) | N-Channel | - | 30V | 130A (Tc) | 2.4 mOhm @ 68A, 10V | 2.2V @ 100µA | 60nC @ 4.5V | 5050pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,952
有现货
|
Infineon Technologies | MOSFET N-CH 30V 179A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 125W (Tc) | N-Channel | - | 30V | 90A (Tc) | 2.2 mOhm @ 90A, 10V | 2.2V @ 100µA | 54nC @ 4.5V | 4945pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,805
有现货
|
Infineon Technologies | MOSFET N-CH 30V 179A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 125W (Tc) | N-Channel | - | 30V | 90A (Tc) | 2.2 mOhm @ 90A, 10V | 2.2V @ 100µA | 54nC @ 4.5V | 4945pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,691
有现货
|
Infineon Technologies | MOSFET N-CH 30V 179A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 125W (Tc) | N-Channel | - | 30V | 90A (Tc) | 2.2 mOhm @ 90A, 10V | 2.2V @ 100µA | 54nC @ 4.5V | 4945pF @ 15V | 4.5V, 10V | ±20V |