- 供应商设备包 :
- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
11 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,718
有现货
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V | |||
|
获得报价 |
1,075
有现货
|
ON Semiconductor | MOSFET N-CH 600V 17A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
获得报价 |
1,719
有现货
|
ON Semiconductor | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 65W (Tc) | N-Channel | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 400V | 8V | ±18V | |||
|
获得报价 |
2,246
有现货
|
Transphorm | MOSFET N-CH 600V 17A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
获得报价 |
1,428
有现货
|
Transphorm | MOSFET N-CH 600V 17A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
获得报价 |
2,623
有现货
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
获得报价 |
2,030
有现货
|
Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
获得报价 |
3,778
有现货
|
Transphorm | MOSFET N-CH 900V 15A TO220AB | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 78W (Tc) | N-Channel | 900V | 15A (Tc) | 205 mOhm @ 10A, 10V | 2.6V @ 500µA | 10nC @ 8V | 780pF @ 600V | 10V | ±18V | |||
|
获得报价 |
753
有现货
|
Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
获得报价 |
751
有现货
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V | |||
|
获得报价 |
873
有现货
|
Transphorm | MOSFET N-CH 650V 16A TO220AB | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V |