- 25°C时的电流-连续漏极（Id） :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- Vgs（最大值） :
28 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,101
有现货
|
Infineon Technologies | MOSFET N-CH 650V 31A TO-247 | Automotive, AEC-Q101, CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
792
有现货
|
Infineon Technologies | MOSFET N-CH 600V 31A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,478
有现货
|
Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
800
有现货
|
Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
2,062
有现货
|
Infineon Technologies | MOSFET N-CH 650V 38A TO220 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 278W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 15nC @ 10V | 2780pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
974
有现货
|
Infineon Technologies | MOSFET N-CH 600V 31A TO263-3 | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
2,904
有现货
|
Microsemi Corporation | MOSFET N-CH 600V 38A D3PAK | CoolMOS™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D3Pak | 278W (Tc) | N-Channel | - | 600V | 38A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | 2826pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,491
有现货
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | DTMOSIV-H | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 135 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,821
有现货
|
Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Digi-Reel® | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | ||
|
|
|
获得报价 |
1,299
有现货
|
Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Cut Tape (CT) | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | ||
|
|
|
获得报价 |
1,086
有现货
|
Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Tape & Reel (TR) | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | ||
|
|
|
获得报价 |
3,456
有现货
|
Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | ||
|
|
|
获得报价 |
2,198
有现货
|
Infineon Technologies | MOSFET N-CH 600V 31A D2PAK | CoolMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
3,048
有现货
|
Infineon Technologies | MOSFET N-CH 600V 31A D2PAK | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
748
有现货
|
Infineon Technologies | MOSFET N-CH 600V 31A D2PAK | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
937
有现货
|
Infineon Technologies | MOSFET N-CH 650V 38A TO263 | CoolMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 278W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
1,279
有现货
|
Infineon Technologies | MOSFET N-CH 650V 38A TO263 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 278W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
2,753
有现货
|
Infineon Technologies | MOSFET N-CH 650V 38A TO263 | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 278W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
1,501
有现货
|
Infineon Technologies | MOSFET N-CH 650V 38A TO220 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 35W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
2,961
有现货
|
Infineon Technologies | MOSFET N-CH 650V 38A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 278W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
1,911
有现货
|
Microsemi Corporation | MOSFET N-CH 600V 38A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 278W (Tc) | N-Channel | - | 600V | 38A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | 2826pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,588
有现货
|
Infineon Technologies | MOSFET N-CH 650V 31A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 255W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
|
获得报价 |
3,552
有现货
|
Infineon Technologies | MOSFET N-CH 650V 38A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 278W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
1,527
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
846
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-3PN | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
1,531
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
1,641
有现货
|
Infineon Technologies | MOSFET N-CH 650V 31A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 255W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
2,189
有现货
|
Cree/Wolfspeed | MOSFET N-CH 900V 11.5A | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 54W (Tc) | N-Channel | - | 900V | 11.5A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V |
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