- 零件状态 :
- 工作温度 :
- 供应商设备包 :
- FET型 :
- 25°C时的电流-连续漏极（Id） :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
941
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.2A SOT223-4 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,530
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,404
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.4A 6TSOP | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 | 2W (Ta) | N-Channel | 100V | 1.4A (Ta) | 460 mOhm @ 1.26A, 10V | 1.8V @ 100µA | 4nC @ 5V | 152.7pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,990
有现货
|
Toshiba Semiconductor and Storage | X34 PB-F UFM S-MOS (LF) TRANSIST | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 800mW (Ta) | P-Channel | 30V | 1.1A (Ta) | 390 mOhm @ 500mA, 10V | 1.8V @ 100µA | - | 86pF @ 15V | 4V, 10V | ±20V | ||
|
|
|
获得报价 |
3,856
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.2A SOT-223 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,286
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.2A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,151
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.2A SOT-223 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,402
有现货
|
Toshiba Semiconductor and Storage | X34 PB USM S-MOS (LF) TRANSISTOR | π-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | 30V | 400mA (Ta) | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | 3.3V, 10V | ±20V | ||
|
|
|
获得报价 |
3,294
有现货
|
Toshiba Semiconductor and Storage | X34 PB USM S-MOS (LF) TRANSISTOR | π-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | 30V | 400mA (Ta) | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | 3.3V, 10V | ±20V | ||
|
|
|
获得报价 |
1,764
有现货
|
Toshiba Semiconductor and Storage | X34 PB USM S-MOS (LF) TRANSISTOR | π-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | 30V | 400mA (Ta) | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | 3.3V, 10V | ±20V |
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