- 25°C时的电流-连续漏极（Id） :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
7 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
2,545
有现货
|
Infineon Technologies | MOSFET N-CH 40V 100A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.25 mOhm @ 60A, 10V | 3.9V @ 50µA | 63nC @ 10V | 2200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,195
有现货
|
Infineon Technologies | MOSFET N-CH 40V 84A 8PQFN | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 4.2W (Ta), 63W (Tc) | N-Channel | - | 40V | 84A (Tc) | 4.6 mOhm @ 50A, 10V | 3.9V @ 50µA | 66nC @ 10V | 2170pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,449
有现货
|
Infineon Technologies | MOSFET N-CH 40V 100A DPAK | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.25 mOhm @ 60A, 10V | 3.9V @ 50µA | 63nC @ 10V | 2200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,931
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
3,526
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
3,782
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | ||
|
|
获得报价 |
962
有现货
|
Infineon Technologies | MOSFET N-CH 40V 95A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 83W (Tc) | N-Channel | - | 40V | 95A (Tc) | 4.5 mOhm @ 57A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V |
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