- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
19 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,434
有现货
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
|
获得报价 |
3,002
有现货
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
|
获得报价 |
2,863
有现货
|
Infineon Technologies | MOSFET N-CH 20V 26A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | |||
|
获得报价 |
2,307
有现货
|
Infineon Technologies | MOSFET N-CH 20V 26A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | |||
|
获得报价 |
3,102
有现货
|
Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 63W (Tc) | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
2,861
有现货
|
Infineon Technologies | MOSFET N CH 20V 28A PQFN 5X6 MM | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 52W (Tc) | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
1,661
有现货
|
Infineon Technologies | MOSFET N CH 20V 28A PQFN 5X6 MM | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 52W (Tc) | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
3,140
有现货
|
Infineon Technologies | MOSFET N-CH 20V 28A PQFN 5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 52W (Tc) | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
3,874
有现货
|
Infineon Technologies | MOSFET N-CH 20V 28A PQFN 5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 52W (Tc) | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
3,074
有现货
|
Infineon Technologies | MOSFET N-CH 20V 28A PQFN 5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 52W (Tc) | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
1,535
有现货
|
Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 63W (Tc) | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
1,234
有现货
|
Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 63W (Tc) | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
2,479
有现货
|
Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 63W (Tc) | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
3,790
有现货
|
Infineon Technologies | MOSFET N-CH 20V 26A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | |||
|
获得报价 |
2,488
有现货
|
Infineon Technologies | MOSFET N-CH 20V 26A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | |||
|
获得报价 |
3,689
有现货
|
Infineon Technologies | MOSFET N-CH 20V 26A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | |||
|
获得报价 |
2,990
有现货
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | - | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
|
获得报价 |
3,371
有现货
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | - | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
|
获得报价 |
1,670
有现货
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V |