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26 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
BSP296L6433HTMA1
获得报价
RFQ
2,204
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP296L6433HTMA1
获得报价
RFQ
1,998
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP296L6433HTMA1
获得报价
RFQ
3,666
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP297 E6327
获得报价
RFQ
1,805
有现货
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP296 E6433
获得报价
RFQ
3,180
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
获得报价
RFQ
3,774
有现货
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
获得报价
RFQ
3,260
有现货
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
获得报价
RFQ
1,329
有现货
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP296L6327HTSA1
获得报价
RFQ
712
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP296L6327HTSA1
获得报价
RFQ
1,889
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP296L6327HTSA1
获得报价
RFQ
1,419
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP295L6327HTSA1
获得报价
RFQ
676
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP295L6327HTSA1
获得报价
RFQ
1,048
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP295L6327HTSA1
获得报价
RFQ
1,538
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP296E6327
获得报价
RFQ
760
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP296E6327
获得报价
RFQ
2,324
有现货
Infineon Technologies MOSFET N-CH 100V 1.1A SOT223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel - 100V 1.1A (Ta) 700 mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2nC @ 10V 364pF @ 25V 4.5V, 10V ±20V
BSP295E6327
获得报价
RFQ
1,201
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP295E6327
获得报价
RFQ
1,299
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
获得报价
RFQ
3,400
有现货
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
单位
$0.90
获得报价
RFQ
3,893
有现货
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
单位
$0.35
获得报价
RFQ
1,188
有现货
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP295E6327T
获得报价
RFQ
1,519
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP295E6327T
获得报价
RFQ
2,694
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP295H6327XTSA1
获得报价
RFQ
3,489
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP295H6327XTSA1
单位
$0.96
获得报价
RFQ
2,617
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP295H6327XTSA1
单位
$0.37
获得报价
RFQ
2,032
有现货
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
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