- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- Vgs(最大值) :
12 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
966
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | |||
|
获得报价 |
943
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | |||
|
获得报价 |
739
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | |||
|
获得报价 |
2,138
有现货
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | |||
|
获得报价 |
1,007
有现货
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | |||
|
获得报价 |
1,875
有现货
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | |||
|
获得报价 |
3,999
有现货
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | - | Surface Mount | Die | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | |||
|
获得报价 |
1,723
有现货
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | - | Surface Mount | Die | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | |||
|
获得报价 |
1,083
有现货
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | - | Surface Mount | Die | N-Channel | - | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | |||
|
获得报价 |
2,842
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 40V | 53A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7nC @ 5V | 1000pF @ 20V | 5V | +6V, -4V | |||
|
获得报价 |
2,806
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 40V | 53A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7nC @ 5V | 1000pF @ 20V | 5V | +6V, -4V | |||
|
获得报价 |
2,395
有现货
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 40V | 53A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7nC @ 5V | 980pF @ 20V | 5V | +6V, -4V |