- 零件状态 :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- Vgs(最大值) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,234
有现货
|
EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Obsolete | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | 205pF @ 50V | 5V | +6V, -5V | |||
|
获得报价 |
656
有现货
|
EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Obsolete | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | 205pF @ 50V | 5V | +6V, -5V | |||
|
获得报价 |
2,689
有现货
|
EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Obsolete | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | 205pF @ 50V | 5V | +6V, -5V | |||
|
获得报价 |
3,719
有现货
|
EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | 220pF @ 50V | 5V | +6V, -4V | |||
|
获得报价 |
2,299
有现货
|
EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | 220pF @ 50V | 5V | +6V, -4V | |||
|
获得报价 |
1,625
有现货
|
EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | 220pF @ 50V | 5V | +6V, -4V |