- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- Vgs(最大值) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,152
有现货
|
EPC | MOSFET N-CH 100V 1.7A DIE | - | Obsolete | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1.7A (Ta) | - | 2.5V @ 600µA | - | 90pF @ 50V | 5V | +6V, -4V | |||
|
获得报价 |
946
有现货
|
EPC | MOSFET N-CH 100V 1.7A DIE | - | Obsolete | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1.7A (Ta) | - | 2.5V @ 600µA | - | 90pF @ 50V | 5V | +6V, -4V | |||
|
获得报价 |
1,803
有现货
|
EPC | MOSFET N-CH 100V 1.7A DIE | - | Obsolete | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1.7A (Ta) | 73 mOhm @ 1A, 5V | 2.5V @ 600µA | 120nC @ 50V | 90pF @ 50V | 5V | +6V, -4V | |||
|
获得报价 |
3,003
有现货
|
EPC | GANFET N-CH 80V 1.7A 6SOLDER BAR | Automotive, AEC-Q101, eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 80V | 1.7A | 80 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | 88pF @ 50V | 5V | +5.75V, -4V | |||
|
获得报价 |
3,222
有现货
|
EPC | GANFET N-CH 80V 1.7A 6SOLDER BAR | Automotive, AEC-Q101, eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 80V | 1.7A | 80 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | 88pF @ 50V | 5V | +5.75V, -4V | |||
|
获得报价 |
1,713
有现货
|
EPC | GANFET N-CH 80V 1.7A 6SOLDER BAR | Automotive, AEC-Q101, eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 80V | 1.7A | 80 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | 88pF @ 50V | 5V | +5.75V, -4V | |||
|
获得报价 |
2,924
有现货
|
EPC | TRANS GAN 100V 1A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1A (Ta) | 65 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | 5V | +6V, -4V | |||
|
获得报价 |
2,681
有现货
|
EPC | TRANS GAN 100V 1A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1A (Ta) | 65 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | 5V | +6V, -4V | |||
|
获得报价 |
2,902
有现货
|
EPC | TRANS GAN 100V 1A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1A (Ta) | 65 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | 5V | +6V, -4V |