- 零件状态 :
- 供应商设备包 :
- 25°C时的电流-连续漏极（Id） :
- Rds开启（最大）@Id，Vgs :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
9 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,610
有现货
|
Infineon Technologies | MOSFET N-CH 100V DIRECTFET-SJ | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 3W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,015
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
730
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,228
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,265
有现货
|
Infineon Technologies | MOSFET N-CH 150V 17A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | - | 150V | 17A (Tc) | 95 mOhm @ 10A, 10V | 4.9V @ 50µA | 20nC @ 10V | 800pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
3,428
有现货
|
Infineon Technologies | MOSFET N-CH 200V 12A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | - | 200V | 12A (Tc) | 170 mOhm @ 7.2A, 10V | 4.9V @ 50µA | 23nC @ 10V | 790pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
1,027
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,227
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,121
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V |
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