4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
3,353
有现货
|
Infineon Technologies | MOSFET NCH 135V 129A D2PAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 135V | 129A (Tc) | 8.4 mOhm @ 77A, 10V | 4V @ 250µA | 270nC @ 10V | 9700pF @ 50V | 10V | ±20V | |||
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获得报价 |
3,535
有现货
|
Infineon Technologies | MOSFET NCH 135V 129A D2PAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 135V | 129A (Tc) | 8.4 mOhm @ 77A, 10V | 4V @ 250µA | 270nC @ 10V | 9700pF @ 50V | 10V | ±20V | |||
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获得报价 |
1,174
有现货
|
Infineon Technologies | MOSFET NCH 135V 129A D2PAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 135V | 129A (Tc) | 8.4 mOhm @ 77A, 10V | 4V @ 250µA | 270nC @ 10V | 9700pF @ 50V | 10V | ±20V | |||
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获得报价 |
3,723
有现货
|
Infineon Technologies | MOSFET NCH 135V 129A TO220 | StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 441W (Tc) | N-Channel | - | 135V | 129A (Tc) | 8.4 mOhm @ 77A, 10V | 4V @ 250µA | 270nC @ 10V | 9700pF @ 50V | 10V | ±20V |