- 供应商设备包 :
- 功耗(最大) :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
12 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,409
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A MPT6 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MPT6 | 2W (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 39nC @ 5V | 3600pF @ 10V | 10V | ±20V | |||
|
获得报价 |
3,497
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A MPT6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MPT6 | 2W (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 39nC @ 5V | 3600pF @ 10V | 10V | ±20V | |||
|
获得报价 |
3,116
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A MPT6 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MPT6 | 2W (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 39nC @ 5V | 3600pF @ 10V | 10V | ±20V | |||
|
获得报价 |
2,183
有现货
|
NXP USA Inc. | MOSFET N-CH 25V 33A LFPAK | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 26W (Tc) | N-Channel | 25V | 33A (Tc) | 12.6 mOhm @ 10A, 10V | 1.95V @ 1mA | 8.3nC @ 10V | 528pF @ 12V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,872
有现货
|
NXP USA Inc. | MOSFET N-CH 25V 33A LFPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 26W (Tc) | N-Channel | 25V | 33A (Tc) | 12.6 mOhm @ 10A, 10V | 1.95V @ 1mA | 8.3nC @ 10V | 528pF @ 12V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,661
有现货
|
NXP USA Inc. | MOSFET N-CH 25V 33A LFPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 26W (Tc) | N-Channel | 25V | 33A (Tc) | 12.6 mOhm @ 10A, 10V | 1.95V @ 1mA | 8.3nC @ 10V | 528pF @ 12V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,492
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A SOP8 | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 650mW (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 39nC @ 5V | 3600pF @ 10V | 4V, 10V | ±20V | |||
|
获得报价 |
2,046
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A SOP8 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 650mW (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 39nC @ 5V | 3600pF @ 10V | 4V, 10V | ±20V | |||
|
获得报价 |
2,799
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A SOP8 | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 650mW (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 39nC @ 5V | 3600pF @ 10V | 4V, 10V | ±20V | |||
|
获得报价 |
3,482
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A SOP8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 650mW (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 68nC @ 10V | 3600pF @ 10V | 4V, 10V | ±20V | |||
|
获得报价 |
855
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A SOP8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 650mW (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 68nC @ 10V | 3600pF @ 10V | 4V, 10V | ±20V | |||
|
获得报价 |
1,197
有现货
|
Rohm Semiconductor | MOSFET P-CH 30V 10A SOP8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 650mW (Ta) | P-Channel | 30V | 10A (Ta) | 12.6 mOhm @ 10A, 10V | 2.5V @ 1mA | 68nC @ 10V | 3600pF @ 10V | 4V, 10V | ±20V |