- 零件状态 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
7 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
2,243
有现货
|
Infineon Technologies | MOSFET N-CH 60V 100A TO-263 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 300W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 100A, 10V | 2V @ 270µA | 225nC @ 10V | 7600pF @ 30V | 4.5V, 10V | ±20V | ||
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|
|
获得报价 |
3,877
有现货
|
Infineon Technologies | MOSFET N-CH 60V 100A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 300W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 100A, 10V | 2V @ 270µA | 225nC @ 10V | 7600pF @ 30V | 4.5V, 10V | ±20V | ||
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|
|
获得报价 |
1,184
有现货
|
Infineon Technologies | MOSFET N-CH 60V 100A TO-263 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 300W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 100A, 10V | 2V @ 270µA | 225nC @ 10V | 7600pF @ 30V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,448
有现货
|
IXYS | MOSFET N-CH 150V 235A | GigaMOS™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 24-PowerSMD, 21 Leads | 24-SMPD | 680W (Tc) | N-Channel | - | 150V | 235A (Tc) | 4.4 mOhm @ 100A, 10V | 5V @ 8mA | 715nC @ 10V | 47500pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
3,874
有现货
|
Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 179W (Tc) | N-Channel | - | 80V | 120A (Tc) | 4.4 mOhm @ 100A, 10V | 4V @ 120µA | 95nC @ 10V | 6450pF @ 25V | 10V | ±20V | ||
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获得报价 |
1,563
有现货
|
Infineon Technologies | MOSFET N-CH TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 179W (Tc) | N-Channel | - | 80V | 120A (Tc) | 4.4 mOhm @ 100A, 10V | 4V @ 120µA | 95nC @ 10V | 6450pF @ 25V | 10V | ±20V | ||
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获得报价 |
3,076
有现货
|
IXYS | MOSFET N-CH 85V 280A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 700W (Tc) | N-Channel | - | 85V | 280A (Tc) | 4.4 mOhm @ 100A, 10V | 4V @ 8mA | 580nC @ 10V | 19000pF @ 25V | 10V | ±20V |
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