- 零件状态 :
- 包装材料 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
13 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
648
有现货
|
Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 167W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,408
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A PG-TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 167W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,873
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
|
获得报价 |
1,038
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 167W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,894
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 167W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,396
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
|
获得报价 |
1,843
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
|
获得报价 |
2,197
有现货
|
IXYS | MOSFET N-CH 75V 340A TO268 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 935W (Tc) | N-Channel | - | 75V | 340A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 3mA | 300nC @ 10V | 19000pF @ 25V | 10V | - | |||
|
获得报价 |
1,273
有现货
|
Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 208W (Tc) | N-Channel | - | 80V | 160A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 150µA | 112nC @ 10V | 7750pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,691
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 167W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,627
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
|
获得报价 |
2,611
有现货
|
Infineon Technologies | MOSFET N-CH 60V 120A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
|
获得报价 |
2,242
有现货
|
IXYS | MOSFET N-CH 75V 340A TO-247 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 935W (Tc) | N-Channel | - | 75V | 340A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 3mA | 300nC @ 10V | 19000pF @ 25V | 10V | ±20V |