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14 产品

图片	型号	价格	数量		库存	制造商	描述	系列	零件状态	包装材料	技术	工作温度	安装类型	包装/箱	供应商设备包	功耗（最大）	FET型	FET特性	漏极-源极电压（Vdss）	25°C时的电流-连续漏极（Id）	Rds开启（最大）@Id，Vgs	Vgs（th）（最大）@Id	栅极电荷（Qg）（最大）@Vgs	输入电容（Ciss）（最大）@Vds	驱动电压（最大Rds接通，最小Rds接通）	Vgs（最大值）
	IRFZ48NSTRRPBF		获得报价	PDF RFQ	3,128 有现货	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK	HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	IRFZ48NLPBF		获得报价	PDF RFQ	766 有现货	Infineon Technologies	MOSFET N-CH 55V 64A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	IRL3103D2PBF		获得报价	PDF RFQ	3,142 有现货	Infineon Technologies	MOSFET N-CH 30V 54A TO-220AB	FETKY™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	2W (Ta), 70W (Tc)	N-Channel	-	30V	54A (Tc)	14 mOhm @ 32A, 10V	1V @ 250µA	44nC @ 4.5V	2300pF @ 25V	4.5V, 10V	±16V
	IRFZ48NL		获得报价	PDF RFQ	2,105 有现货	Infineon Technologies	MOSFET N-CH 55V 64A TO-262	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	IRFZ48NSTRR		获得报价	PDF RFQ	2,536 有现货	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK	HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	94-2989		获得报价	PDF RFQ	3,882 有现货	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK	HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	IRL3103D2STRL		获得报价	PDF RFQ	3,090 有现货	Infineon Technologies	MOSFET N-CH 30V 54A D2PAK	FETKY™	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-	N-Channel	-	30V	54A (Tc)	14 mOhm @ 32A, 10V	-	44nC @ 4.5V	2300pF @ 25V	4.5V, 10V	±16V
	IRL3103D2S		获得报价	PDF RFQ	1,025 有现货	Infineon Technologies	MOSFET N-CH 30V 54A D2PAK	FETKY™	Obsolete	Tube	MOSFET (Metal Oxide)	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-	N-Channel	-	30V	54A (Tc)	14 mOhm @ 32A, 10V	-	44nC @ 4.5V	2300pF @ 25V	4.5V, 10V	±16V
	IRL3103D2		获得报价	PDF RFQ	2,335 有现货	Infineon Technologies	MOSFET N-CH 30V 54A TO-220AB	FETKY™	Obsolete	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-220-3	TO-220AB	2W (Ta), 70W (Tc)	N-Channel	-	30V	54A (Tc)	14 mOhm @ 32A, 10V	1V @ 250µA	44nC @ 4.5V	2300pF @ 25V	4.5V, 10V	±16V
	IRFZ48NSPBF	单位 $0.70	获得报价	PDF RFQ	3,113 有现货	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK	HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	IRFZ48NSTRLPBF		获得报价	PDF RFQ	3,103 有现货	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK	HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	IRFZ48NSTRLPBF	单位 $1.61	获得报价	PDF RFQ	1,645 有现货	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK	HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	IRFZ48NSTRLPBF	单位 $0.74	获得报价	PDF RFQ	3,813 有现货	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK	HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V
	IRFZ48NPBF	单位 $1.13	获得报价	PDF RFQ	1,655 有现货	Infineon Technologies	MOSFET N-CH 55V 64A TO-220AB	HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	130W (Tc)	N-Channel	-	55V	64A (Tc)	14 mOhm @ 32A, 10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	10V	±20V

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