- FET特性 :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
19 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,515
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
3,060
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
2,618
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
1,805
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,270
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
2,550
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
1,011
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
3,774
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,260
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,329
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,400
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,893
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,188
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
683
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
771
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
2,874
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
3,355
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
2,697
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | ||
|
|
|
获得报价 |
2,831
有现货
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V |
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