- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,062
有现货
|
Infineon Technologies | MOSFET N-CH 40V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 10V | ±20V | |||
|
获得报价 |
984
有现货
|
Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 30V | 80A (Tc) | 2.8 mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,036
有现货
|
Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 30V | 80A (Tc) | 2.8 mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,465
有现货
|
Infineon Technologies | MOSFET N-CH 40V 100A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 214W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,850
有现货
|
STMicroelectronics | MOSFET N-CH 30V 160A POWERSO-10 | STripFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | PowerSO-10 Exposed Bottom Pad | 10-PowerSO | 210W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.8 mOhm @ 80A, 10V | 1V @ 250µA | 140nC @ 10V | 4700pF @ 25V | 5V, 10V | ±15V | |||
|
获得报价 |
3,223
有现货
|
STMicroelectronics | MOSFET N-CH 30V 160A POWERSO-10 | STripFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | PowerSO-10 Exposed Bottom Pad | 10-PowerSO | 210W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.8 mOhm @ 80A, 10V | 1V @ 250µA | 140nC @ 10V | 4700pF @ 25V | 5V, 10V | ±15V | |||
|
获得报价 |
1,443
有现货
|
ON Semiconductor | MOSFET N-CH 100V 210A POWER56 | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | 8-PSOF | 3.5W (Ta), 300W (Tc) | N-Channel | - | 100V | 210A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 250µA | 111nC @ 10V | 8755pF @ 50V | 10V | ±20V | |||
|
获得报价 |
2,235
有现货
|
ON Semiconductor | MOSFET N-CH 100V 210A POWER56 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | 8-PSOF | 3.5W (Ta), 300W (Tc) | N-Channel | - | 100V | 210A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 250µA | 111nC @ 10V | 8755pF @ 50V | 10V | ±20V | |||
|
获得报价 |
2,069
有现货
|
ON Semiconductor | MOSFET N-CH 100V 210A POWER56 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | 8-PSOF | 3.5W (Ta), 300W (Tc) | N-Channel | - | 100V | 210A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 250µA | 111nC @ 10V | 8755pF @ 50V | 10V | ±20V | |||
|
获得报价 |
3,589
有现货
|
ON Semiconductor | MOSFET N-CH 80V 110A TO-220 | Automotive, AEC-Q101, PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | N-Channel | - | 80V | 110A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | 10000pF @ 40V | 10V | ±20V |