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10 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
Default Photo
获得报价
RFQ
840
有现货
Infineon Technologies MOSFET N-CH 100V 100A TO262-3 OptiMOS™ 3 Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel - 100V 137A (Tc) 4.5 mOhm @ 100A, 10V 3.5V @ 150µA 117nC @ 10V 8410pF @ 50V 6V, 10V ±20V
IPP045N10N3GHKSA1
获得报价
RFQ
3,767
有现货
Infineon Technologies MOSFET N-CH 100V 100A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 214W (Tc) N-Channel - 100V 100A (Tc) 4.5 mOhm @ 100A, 10V 3.5V @ 150µA 117nC @ 10V 8410pF @ 50V 6V, 10V ±20V
Default Photo
单位
$3.39
获得报价
RFQ
1,379
有现货
ON Semiconductor FET ENGR DEV-NOT REL PowerTrench® Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 2.4W (Ta), 150W (Tc) N-Channel - 100V 128A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 310µA 68nC @ 10V 5065pF @ 50V 10V ±20V
Default Photo
单位
$3.28
获得报价
RFQ
3,371
有现货
ON Semiconductor FET ENGR DEV-NOT REL PowerTrench® Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 2.4W (Ta), 37.5W (Tc) N-Channel - 100V 128A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 310µA 68nC @ 10V 5065pF @ 50V 10V ±20V
FDP045N10A
获得报价
RFQ
2,194
有现货
ON Semiconductor MOSFET N-CH 100V 120A TO-220-3 PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 263W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 250µA 74nC @ 10V 5270pF @ 50V 10V ±20V
Default Photo
获得报价
RFQ
1,724
有现货
ON Semiconductor MOSFET N-CH 100V 120A I2PAK-3 PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 263W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 250µA 74nC @ 10V 5270pF @ 50V 10V ±20V
IPI045N10N3GXKSA1
单位
$3.07
获得报价
RFQ
2,625
有现货
Infineon Technologies MOSFET N-CH 100V 100A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel - 100V 100A (Tc) 4.5 mOhm @ 100A, 10V 3.5V @ 150µA 117nC @ 10V 8410pF @ 50V 6V, 10V ±20V
FDI045N10A-F102
单位
$4.34
获得报价
RFQ
810
有现货
ON Semiconductor MOSFET N-CH 100V 120A I2PAK-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 263W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 250µA 74nC @ 10V 5270pF @ 50V 10V ±20V
IPP045N10N3GXKSA1
单位
$2.76
获得报价
RFQ
2,370
有现货
Infineon Technologies MOSFET N-CH 100V 100A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 214W (Tc) N-Channel - 100V 100A (Tc) 4.5 mOhm @ 100A, 10V 3.5V @ 150µA 117nC @ 10V 8410pF @ 50V 6V, 10V ±20V
FDP045N10A-F102
单位
$3.18
获得报价
RFQ
2,581
有现货
ON Semiconductor MOSFET N-CH 100V 120A TO-220-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 263W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 250µA 74nC @ 10V 5270pF @ 50V 10V ±20V
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