- 供应商设备包 :
- 功耗（最大） :
17 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
3,377
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
3,800
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
2,214
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
1,925
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,394
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
3,170
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
3,866
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
3,046
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
1,867
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
776
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
604
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
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获得报价 |
2,314
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
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获得报价 |
2,830
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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获得报价 |
1,407
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
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获得报价 |
1,389
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
2,377
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
3,315
有现货
|
Infineon Technologies | MOSFET P-CH 150V 13A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V |
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