- 零件状态 :
- Vgs(th)(最大)@Id :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,793
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,912
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,790
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,486
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V |