- 零件状态 :
- 供应商设备包 :
- 功耗(最大) :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,641
有现货
|
Infineon Technologies | MOSFET N-CH 30V 13.3A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 13.3A (Ta) | 9 mOhm @ 15A, 4.5V | 1V @ 250µA | 62nC @ 5V | 3780pF @ 16V | 4.5V | ±12V | |||
|
获得报价 |
3,443
有现货
|
Infineon Technologies | MOSFET N-CH 30V 13.3A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 13.3A (Ta) | 9 mOhm @ 15A, 4.5V | 1V @ 250µA | 62nC @ 5V | 3780pF @ 16V | 4.5V | ±12V | |||
|
获得报价 |
2,962
有现货
|
Infineon Technologies | MOSFET N-CH 30V 13.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 13.3A (Ta) | 9 mOhm @ 15A, 4.5V | 1V @ 250µA | 62nC @ 5V | 3780pF @ 16V | 4.5V | ±12V | |||
|
获得报价 |
1,549
有现货
|
Infineon Technologies | MOSFET N-CH 30V 13.3A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 13.3A (Ta) | 9 mOhm @ 15A, 4.5V | 1V @ 250µA | 62nC @ 5V | 3780pF @ 16V | 4.5V | ±12V | |||
|
获得报价 |
2,049
有现货
|
Vishay Siliconix | MOSFET P-CH 20V 18A 1212-8 PPAK | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 39.1W (Tc) | P-Channel | - | 20V | 18A (Tc) | 9 mOhm @ 15A, 4.5V | 1V @ 250µA | 168nC @ 8V | 5875pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
获得报价 |
752
有现货
|
Vishay Siliconix | MOSFET P-CH 20V 18A 1212-8 PPAK | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 39.1W (Tc) | P-Channel | - | 20V | 18A (Tc) | 9 mOhm @ 15A, 4.5V | 1V @ 250µA | 168nC @ 8V | 5875pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
获得报价 |
2,637
有现货
|
Vishay Siliconix | MOSFET P-CH 20V 18A 1212-8 PPAK | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 39.1W (Tc) | P-Channel | - | 20V | 18A (Tc) | 9 mOhm @ 15A, 4.5V | 1V @ 250µA | 168nC @ 8V | 5875pF @ 10V | 1.8V, 4.5V | ±8V |