- 零件状态 :
- FET特性 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
12 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,563
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
|
获得报价 |
620
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
|
获得报价 |
2,728
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
|
获得报价 |
603
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 75W (Tc) | N-Channel | - | 25V | 32A (Ta), 160A (Tc) | 1.8 mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 4280pF @ 13V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,963
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 75W (Tc) | N-Channel | - | 25V | 32A (Ta), 160A (Tc) | 1.8 mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 4280pF @ 13V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,576
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 75W (Tc) | N-Channel | - | 25V | 32A (Ta), 160A (Tc) | 1.8 mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 4280pF @ 13V | 4.5V, 10V | ±20V | |||
|
获得报价 |
728
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
|
获得报价 |
1,202
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
|
获得报价 |
1,697
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
|
获得报价 |
3,683
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET-MX | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 75W (Tc) | N-Channel | - | 25V | 32A (Ta), 160A (Tc) | 1.8 mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 4280pF @ 13V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,379
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET-MX | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 75W (Tc) | N-Channel | - | 25V | 32A (Ta), 160A (Tc) | 1.8 mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 4280pF @ 13V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,037
有现货
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET-MX | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 75W (Tc) | N-Channel | - | 25V | 32A (Ta), 160A (Tc) | 1.8 mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 4280pF @ 13V | 4.5V, 10V | ±20V |