- 供应商设备包 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,272
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 11.1A 8SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5.7W (Tc) | N-Channel | - | 100V | 11.1A (Tc) | 23 mOhm @ 15A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
|
获得报价 |
906
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 11.1A 8SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5.7W (Tc) | N-Channel | - | 100V | 11.1A (Tc) | 23 mOhm @ 15A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,816
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 11.1A 8SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5.7W (Tc) | N-Channel | - | 100V | 11.1A (Tc) | 23 mOhm @ 15A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,098
有现货
|
Infineon Technologies | MOSFET NCH 500V 11.1A TO220-3 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 28W (Tc) | N-Channel | - | 500V | 11.1A (Tc) | 500 mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | 433pF @ 100V | 13V | ±20V | |||
|
获得报价 |
3,448
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.1A 4VSON | CoolMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 96W (Tc) | N-Channel | - | 650V | 11.1A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
获得报价 |
3,435
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.1A 4VSON | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 96W (Tc) | N-Channel | - | 650V | 11.1A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
获得报价 |
3,248
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.1A 4VSON | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 96W (Tc) | N-Channel | - | 650V | 11.1A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | 10V | ±20V |