- 系列 :
- 零件状态 :
- FET型 :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
13 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,829
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 13 mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,351
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 13 mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,668
有现货
|
Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | ||
|
|
获得报价 |
2,199
有现货
|
ON Semiconductor | MOSFET N-CH 30V 11.1A 8-SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 910mW (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 4 mOhm @ 18A, 10V | 2.5V @ 250µA | 36nC @ 4.5V | 5300pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,647
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 13 mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,690
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 13 mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,870
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 390 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
3,993
有现货
|
Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | ||
|
|
|
获得报价 |
3,952
有现货
|
Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | ||
|
|
|
获得报价 |
2,789
有现货
|
Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | ||
|
|
获得报价 |
2,104
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
1,673
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
1,188
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V |
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