- 供应商设备包 :
- 功耗(最大) :
- FET型 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,166
有现货
|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,524
有现货
|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,618
有现货
|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,735
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 19.2A 8-SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.9W (Ta), 5.9W (Tc) | P-Channel | - | 30V | 19.2A (Tc) | 8.8 mOhm @ 10A, 10V | 2.6V @ 250µA | 135nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±25V | |||
|
获得报价 |
1,908
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 19.2A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.9W (Ta), 5.9W (Tc) | P-Channel | - | 30V | 19.2A (Tc) | 8.8 mOhm @ 10A, 10V | 2.6V @ 250µA | 135nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±25V | |||
|
获得报价 |
3,138
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 19.2A 8-SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.9W (Ta), 5.9W (Tc) | P-Channel | - | 30V | 19.2A (Tc) | 8.8 mOhm @ 10A, 10V | 2.6V @ 250µA | 135nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±25V |