- FET型 :
- Rds开启（最大）@Id，Vgs :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
8 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,883
有现货
|
Infineon Technologies | MOSFET N-CH 650V 13.4A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 156W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,395
有现货
|
Infineon Technologies | MOSFET N-CH 650V 13.4A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 156W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
715
有现货
|
ON Semiconductor | MOSFET N-CH 500V 13.4A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 190W (Tc) | N-Channel | - | 500V | 13.4A (Tc) | 430 mOhm @ 6.7A, 10V | 5V @ 250µA | 60nC @ 10V | 2300pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,558
有现货
|
Infineon Technologies | MOSFET N-CH 650V 13.4A TO-247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,868
有现货
|
Infineon Technologies | MOSFET N-CH 650V 13.4A TO220-FP | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 34W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,900
有现货
|
Vishay Siliconix | MOSFET P-CH 20V 13.4A 8SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 5W (Tc) | P-Channel | - | 20V | 13.4A (Tc) | 15.5 mOhm @ 9A, 4.5V | 1V @ 250µA | 90nC @ 8V | 2380pF @ 10V | 1.8V, 4.5V | ±8V | ||
|
|
|
获得报价 |
2,439
有现货
|
Vishay Siliconix | MOSFET P-CH 20V 13.4A 8SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 5W (Tc) | P-Channel | - | 20V | 13.4A (Tc) | 15.5 mOhm @ 9A, 4.5V | 1V @ 250µA | 90nC @ 8V | 2380pF @ 10V | 1.8V, 4.5V | ±8V | ||
|
|
|
获得报价 |
3,166
有现货
|
Vishay Siliconix | MOSFET P-CH 20V 13.4A 8SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | P-Channel | - | 20V | 13.4A (Tc) | 15.5 mOhm @ 9A, 4.5V | 1V @ 250µA | 90nC @ 8V | 2380pF @ 10V | 1.8V, 4.5V | ±8V |
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