- 包装/箱 :
- FET型 :
- FET特性 :
- Rds开启（最大）@Id，Vgs :
-
- 10.5 mOhm @ 60A, 10V (1)
- 100 mOhm @ 20A, 20V (2)
- 100 mOhm @ 23A, 10V (2)
- 11.6 mOhm @ 33A, 10V (1)
- 110 mOhm @ 24A, 10V (3)
- 130 mOhm @ 22A, 10V (2)
- 20 mOhm @ 22A, 10V (1)
- 240 mOhm @ 20A, 10V (2)
- 34 mOhm @ 25A, 10V (2)
- 35 mOhm @ 25A, 10V (4)
- 45 mOhm @ 25A, 10V (13)
- 55 mOhm @ 25A, 10V (2)
- 65 mOhm @ 15.9A, 10V (3)
- 70 mOhm @ 25A, 10V (1)
- 72 mOhm @ 15A, 10V (1)
- 9 mOhm @ 10A, 10V (4)
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
- Vgs（最大值） :
44 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,346
有现货
|
NXP USA Inc. | MOSFET N-CH 100V 41A D2PAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 149W (Tc) | N-Channel | - | 100V | 41A (Tc) | 34 mOhm @ 25A, 10V | 2V @ 1mA | - | 3573pF @ 25V | 4.5V, 10V | ±10V | ||
|
|
获得报价 |
1,687
有现货
|
Microsemi Corporation | MOSFET N-CH 1200V 41A TO247 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 273W (Tc) | N-Channel | - | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | ||
|
|
获得报价 |
1,473
有现货
|
Infineon Technologies | MOSFET P-CH 55V 41A TO-220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 63W (Tc) | P-Channel | - | 55V | 41A (Tc) | 20 mOhm @ 22A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,884
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,717
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
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|
|
获得报价 |
2,978
有现货
|
IXYS | MOSFET N-CH 250V 41A TO-247A | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 300W (Tc) | N-Channel | - | 250V | 41A (Tc) | 72 mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | 3200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,057
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,583
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,679
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,796
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
897
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V 41A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 149W (Tc) | N-Channel | - | 100V | 41A (Tc) | 35 mOhm @ 25A, 10V | 4V @ 1mA | - | 2535pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,192
有现货
|
IXYS | MOSFET N-CH 500V 41A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 400W (Tc) | N-Channel | - | 500V | 41A (Tc) | 110 mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | 8000pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,975
有现货
|
IXYS | MOSFET N-CH 500V 41A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 400W (Tc) | N-Channel | - | 500V | 41A (Tc) | 110 mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | 8000pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,234
有现货
|
IXYS | MOSFET N-CH 600V 41A ISOPLUS264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ | 500W (Tc) | N-Channel | - | 600V | 41A (Tc) | 130 mOhm @ 22A, 10V | 4.5V @ 8mA | 330nC @ 10V | 8900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,256
有现货
|
Microsemi Corporation | MOSFET N-CH 500V 41A SOT227 | POWER MOS 7® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 378W (Tc) | N-Channel | - | 500V | 41A (Tc) | 100 mOhm @ 23A, 10V | 5V @ 2.5mA | 96nC @ 10V | 4360pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,583
有现货
|
IXYS | MOSFET N-CH 600V 41A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 500W (Tc) | N-Channel | - | 600V | 41A (Tc) | 130 mOhm @ 22A, 10V | 4.5V @ 8mA | 330nC @ 10V | 8900pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,334
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,002
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 40V 41A 8WDFN | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30W (Tc) | N-Channel | - | 40V | 41A (Tc) | 9 mOhm @ 10A, 10V | 2.2V @ 20µA | 12nC @ 10V | 660pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,868
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,132
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,579
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V 41A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 149W (Tc) | N-Channel | - | 100V | 41A (Tc) | 34 mOhm @ 25A, 10V | 2V @ 1mA | - | 3573pF @ 25V | 4.5V, 10V | ±10V | ||
|
|
获得报价 |
1,272
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 40V 41A 8WDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30W (Tc) | N-Channel | - | 40V | 41A (Tc) | 9 mOhm @ 10A, 10V | 2.2V @ 20µA | 5.5nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,242
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 40V 41A 8WDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30W (Tc) | N-Channel | - | 40V | 41A (Tc) | 9 mOhm @ 10A, 10V | 2.2V @ 20µA | 5.5nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,610
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 40V 41A 8WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30W (Tc) | N-Channel | - | 40V | 41A (Tc) | 9 mOhm @ 10A, 10V | 2.2V @ 20µA | 5.5nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,389
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 41A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 230W (Tc) | N-Channel | - | 100V | 41A (Tc) | 55 mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | 2800pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,719
有现货
|
Microsemi Corporation | MOSFET N-CH 1200V 41A D3PAK | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 273W (Tc) | N-Channel | - | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | ||
|
|
|
获得报价 |
2,466
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,039
有现货
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,094
有现货
|
Microsemi Corporation | MOSFET N-CH 800V 41A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 800V | 41A (Tc) | 240 mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,608
有现货
|
IXYS | MOSFET N-CH 600V 38A I4-PAC-5 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 (3 Leads) | ISOPLUS i4-PAC™ | - | N-Channel | Super Junction | 600V | 41A (Tc) | 70 mOhm @ 25A, 10V | 3.9V @ 3mA | 250nC @ 10V | - | 10V | ±20V |
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