- 零件状态 :
- FET型 :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,850
有现货
|
Infineon Technologies | MOSFET P-CH 40V 74A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 143W (Tc) | P-Channel | - | 40V | 56A (Ta) | 16 mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | 7676pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
678
有现货
|
Infineon Technologies | MOSFET N-CH 120V 56A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | |||
|
获得报价 |
891
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 120V 56A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 168W (Tc) | N-Channel | - | 120V | 56A (Ta) | 7 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | 10V | ±20V | |||
|
获得报价 |
2,860
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 56A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 70W (Tc) | N-Channel | - | 30V | 56A (Ta) | 1.9 mOhm @ 28A, 10V | 2.3V @ 1mA | 91nC @ 10V | 7700pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,142
有现货
|
Infineon Technologies | MOSFET N-CH 120V 56A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | |||
|
获得报价 |
2,297
有现货
|
Infineon Technologies | MOSFET N-CH 120V 56A TO263-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.4 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | |||
|
获得报价 |
1,971
有现货
|
Infineon Technologies | MOSFET N-CH 120V 56A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.4 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | |||
|
获得报价 |
1,040
有现货
|
Infineon Technologies | MOSFET N-CH 120V 56A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.4 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V |