- 功耗(最大) :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- Vgs(最大值) :
13 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
703
有现货
|
IXYS | MOSFET P-CH 65V 120A TO-247 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 298W (Tc) | P-Channel | 65V | 120A (Tc) | 10 mOhm @ 500mA, 10V | 4V @ 250µA | 185nC @ 10V | 13200pF @ 25V | 10V | ±15V | |||
|
获得报价 |
1,247
有现货
|
IXYS | MOSFET P-CH 65V 28A TO-263 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 83W (Tc) | P-Channel | 65V | 28A (Tc) | 45 mOhm @ 14A, 10V | 4.5V @ 250µA | 46nC @ 10V | 2030pF @ 25V | 10V | ±15V | |||
|
获得报价 |
3,587
有现货
|
IXYS | MOSFET P-CH 65V 120A TO-263 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 298W (Tc) | P-Channel | 65V | 120A (Tc) | 10 mOhm @ 500mA, 10V | 4V @ 250µA | 185nC @ 10V | 13200pF @ 25V | 10V | ±15V | |||
|
获得报价 |
2,881
有现货
|
IXYS | MOSFET P-CH 65V 120A TO-220 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 298W (Tc) | P-Channel | 65V | 120A (Tc) | 10 mOhm @ 500mA, 10V | 4V @ 250µA | 185nC @ 10V | 13200pF @ 25V | 10V | ±15V | |||
|
获得报价 |
1,128
有现货
|
IXYS | MOSFET N-CH 65V 130A TO-220 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | 65V | 130A (Tc) | 6.6 mOhm @ 50A, 10V | 4V @ 250µA | 79nC @ 10V | 4800pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,730
有现货
|
IXYS | MOSFET N-CH 65V 130A TO-263 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 250W (Tc) | N-Channel | 65V | 130A (Tc) | 6.6 mOhm @ 50A, 10V | 4V @ 250µA | 79nC @ 10V | 4800pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,671
有现货
|
IXYS | MOSFET P-CH 65V 28A TO-220 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 83W (Tc) | P-Channel | 65V | 28A (Tc) | 45 mOhm @ 14A, 10V | 4.5V @ 250µA | 46nC @ 10V | 2030pF @ 25V | 10V | ±15V | |||
|
获得报价 |
2,748
有现货
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2.7A (Ta) | 130 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 32.5V | 5V | +6V, -4V | |||
|
获得报价 |
1,837
有现货
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2.7A (Ta) | 130 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 32.5V | 5V | +6V, -4V | |||
|
获得报价 |
1,543
有现货
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2.7A (Ta) | 130 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 32.5V | 5V | +6V, -4V | |||
|
获得报价 |
3,743
有现货
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
|
获得报价 |
2,870
有现货
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
|
获得报价 |
3,532
有现货
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V |