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10 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IRFH5106TRPBF
获得报价
RFQ
3,903
有现货
Infineon Technologies MOSFET N-CH 60V 21A 8-PQFN HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 60V 21A (Ta), 100A (Tc) 5.6 mOhm @ 50A, 10V 4V @ 250µA 75nC @ 10V 3090pF @ 25V 10V ±20V
IRFH5110TR2PBF
获得报价
RFQ
3,535
有现货
Infineon Technologies MOSFET N-CH 100V 5X6 PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
IRFH5110TR2PBF
获得报价
RFQ
1,289
有现货
Infineon Technologies MOSFET N-CH 100V 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
IRFH5106TR2PBF
获得报价
RFQ
880
有现货
Infineon Technologies MOSFET N-CH 60V 100A 5X6 PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 60V 21A (Ta), 100A (Tc) 5.6 mOhm @ 50A, 10V 4V @ 250µA 75nC @ 10V 3090pF @ 25V 10V ±20V
IRFH5106TR2PBF
获得报价
RFQ
1,827
有现货
Infineon Technologies MOSFET N-CH 60V 100A 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 60V 21A (Ta), 100A (Tc) 5.6 mOhm @ 50A, 10V 4V @ 250µA 75nC @ 10V 3090pF @ 25V 10V ±20V
IRFH5110TRPBF
单位
$0.59
获得报价
RFQ
1,854
有现货
Infineon Technologies MOSFET N-CH 100V 11A 8-PQFN HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
IRFH5104TRPBF
获得报价
RFQ
3,896
有现货
Infineon Technologies MOSFET N-CH 40V 24A PQFN HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 40V 24A (Ta), 100A (Tc) 3.5 mOhm @ 50A, 10V 4V @ 100µA 80nC @ 10V 3120pF @ 25V 10V ±20V
IRFH5104TR2PBF
获得报价
RFQ
2,332
有现货
Infineon Technologies MOSFET N-CH 40V 24A PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 40V 24A (Ta), 100A (Tc) 3.5 mOhm @ 50A, 10V 4V @ 100µA 80nC @ 10V 3120pF @ 25V 10V ±20V
IRFH5104TR2PBF
单位
$2.43
获得报价
RFQ
1,538
有现货
Infineon Technologies MOSFET N-CH 40V 24A PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 40V 24A (Ta), 100A (Tc) 3.5 mOhm @ 50A, 10V 4V @ 100µA 80nC @ 10V 3120pF @ 25V 10V ±20V
IRFH5104TR2PBF
单位
$1.52
获得报价
RFQ
1,515
有现货
Infineon Technologies MOSFET N-CH 40V 24A PQFN HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 40V 24A (Ta), 100A (Tc) 3.5 mOhm @ 50A, 10V 4V @ 100µA 80nC @ 10V 3120pF @ 25V 10V ±20V
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