- 零件状态 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
3,126
有现货
|
Infineon Technologies | MOSFET N-CH 20V 211A DIRECTFET | HEXFET®, StrongIRFET™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MD | DIRECTFET™ MD | 2.1W (Ta), 63W (Tc) | N-Channel | 20V | 38A (Ta), 211A (Tc) | 0.75 mOhm @ 50A, 10V | 1.1V @ 100µA | 158nC @ 4.5V | 8292pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
|
获得报价 |
2,646
有现货
|
Infineon Technologies | MOSFET N-CH 20V 211A DIRECTFET | HEXFET®, StrongIRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MD | DIRECTFET™ MD | 2.1W (Ta), 63W (Tc) | N-Channel | 20V | 38A (Ta), 211A (Tc) | 0.75 mOhm @ 50A, 10V | 1.1V @ 100µA | 158nC @ 4.5V | 8292pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
|
获得报价 |
3,168
有现货
|
Infineon Technologies | MOSFET N-CH 20V 211A DIRECTFET | HEXFET®, StrongIRFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MD | DIRECTFET™ MD | 2.1W (Ta), 63W (Tc) | N-Channel | 20V | 38A (Ta), 211A (Tc) | 0.75 mOhm @ 50A, 10V | 1.1V @ 100µA | 158nC @ 4.5V | 8292pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
获得报价 |
1,758
有现货
|
Infineon Technologies | MOSFET N-CH 100V 40A 8TSDSON | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 63W (Tc) | N-Channel | 100V | 40A (Tc) | 15 mOhm @ 20A, 10V | 2.1V @ 33µA | 35nC @ 10V | 2500pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,617
有现货
|
Infineon Technologies | MOSFET N-CH 100V 40A 8TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 63W (Tc) | N-Channel | 100V | 40A (Tc) | 15 mOhm @ 20A, 10V | 2.1V @ 33µA | 35nC @ 10V | 2500pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
784
有现货
|
Infineon Technologies | MOSFET N-CH 100V 40A 8TSDSON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 63W (Tc) | N-Channel | 100V | 40A (Tc) | 15 mOhm @ 20A, 10V | 2.1V @ 33µA | 35nC @ 10V | 2500pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,259
有现货
|
Infineon Technologies | MOSFET N-CH 100V 40A TSDSON-8 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 63W (Tc) | N-Channel | 100V | 8A (Ta), 40A (Tc) | 16 mOhm @ 20A, 10V | 3.5V @ 12µA | 25nC @ 10V | 1700pF @ 50V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
1,991
有现货
|
Infineon Technologies | MOSFET N-CH 100V 40A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 63W (Tc) | N-Channel | 100V | 8A (Ta), 40A (Tc) | 16 mOhm @ 20A, 10V | 3.5V @ 12µA | 25nC @ 10V | 1700pF @ 50V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
3,390
有现货
|
Infineon Technologies | MOSFET N-CH 100V 40A TSDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 63W (Tc) | N-Channel | 100V | 8A (Ta), 40A (Tc) | 16 mOhm @ 20A, 10V | 3.5V @ 12µA | 25nC @ 10V | 1700pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
1,231
有现货
|
Infineon Technologies | MOSFET N-CH 40V 21A 8TSDSON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 63W (Tc) | N-Channel | 40V | 21A (Ta), 40A (Tc) | 2.8 mOhm @ 20A, 10V | - | 32nC @ 10V | 2300pF @ 20V | 4.5V, 10V | ±20V |
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