- 零件状态 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- Vgs（最大值） :
11 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
2,825
有现货
|
Microsemi Corporation | MOSFET N-CH 800V 28A SP1 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 | 277W (Tc) | N-Channel | 800V | 28A (Tc) | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,836
有现货
|
Microsemi Corporation | MOSFET N-CH 800V 28A SP1 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 | 277W (Tc) | N-Channel | 800V | 28A (Tc) | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,878
有现货
|
ON Semiconductor | MOSFET N-CH 500V 20A TO-247 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 277W (Tc) | N-Channel | 500V | 20A (Tc) | 265 mOhm @ 10A, 10V | 5V @ 250µA | 55nC @ 10V | 3290pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,150
有现货
|
ON Semiconductor | MOSFET N-CH 500V 20A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 277W (Tc) | N-Channel | 500V | 20A (Tc) | 265 mOhm @ 10A, 10V | 5V @ 250µA | 55nC @ 10V | 3290pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,928
有现货
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 150V 106A TO263 | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 277W (Tc) | N-Channel | 150V | 106A (Tc) | 10.7 mOhm @ 20A, 10V | 5.1V @ 250µA | 60nC @ 10V | 3010pF @ 75V | 10V | ±20V | ||
|
|
|
获得报价 |
3,762
有现货
|
Cree/Wolfspeed | ZFET SIC DMOSFET, 1700V VDS, RDS | C2M™ | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 277W (Tc) | N-Channel | 1700V | 40A (Tc) | 125 mOhm @ 28A, 20V | 4V @ 10mA | 120nC @ 20V | 2250pF @ 1000V | 20V | +25V, -10V | ||
|
|
获得报价 |
621
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 22A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 277W (Tc) | N-Channel | 500V | 22A (Tc) | 230 mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | 3450pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,712
有现货
|
Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 277W (Tc) | N-Channel | 80V | 180A (Tc) | 2.2 mOhm @ 100A, 10V | 4V @ 220µA | 167nC @ 10V | 11550pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,262
有现货
|
Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 277W (Tc) | N-Channel | 80V | 180A (Tc) | 2.2 mOhm @ 100A, 10V | 4V @ 220µA | 167nC @ 10V | 11550pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,000
有现货
|
Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 277W (Tc) | N-Channel | 80V | 180A (Tc) | 2.2 mOhm @ 100A, 10V | 4V @ 220µA | 167nC @ 10V | 11550pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,991
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 22A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 277W (Tc) | N-Channel | 500V | 22A (Tc) | 230 mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | 3450pF @ 25V | 10V | ±30V |
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