- 零件状态 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
12 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,182
有现货
|
Infineon Technologies | MOSFET P-CH 60V 80A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,643
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 24A SUPER-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | Super-220™ | SUPER-220™ (TO-273AA) | 340W (Tc) | N-Channel | - | 500V | 24A (Tc) | 230 mOhm @ 13.8A, 10V | 4V @ 250µA | 115nC @ 10V | 3400pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,416
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 340W (Tc) | N-Channel | - | 600V | 17A (Tc) | 420 mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | 2700pF @ 25V | 10V | ±30V | |||
|
获得报价 |
783
有现货
|
Infineon Technologies | MOSFET P-CH 60V 80A TO-220AB | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,736
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 340W (Tc) | N-Channel | - | 600V | 17A (Tc) | 420 mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | 2700pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,286
有现货
|
IXYS | MOSFET N-CH | TrenchT4™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AA | 340W (Tc) | N-Channel | - | 40V | 230A (Tc) | 2.9 mOhm @ 115A, 10V | 4V @ 250µA | 140nC @ 10V | 7400pF @ 25V | 10V | ±15V | |||
|
获得报价 |
1,522
有现货
|
Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,886
有现货
|
Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,836
有现货
|
Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,964
有现货
|
IXYS | MOSFET N-CH | TrenchT4™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 340W (Tc) | N-Channel | - | 40V | 230A (Tc) | 2.9 mOhm @ 115A, 10V | 4V @ 250µA | 140nC @ 10V | 7400pF @ 25V | 10V | ±15V | |||
|
获得报价 |
2,479
有现货
|
Infineon Technologies | MOSFET N-CH 75V 120A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 340W (Tc) | N-Channel | - | 75V | 120A (Tc) | 3.3 mOhm @ 75A, 10V | 4V @ 250µA | 220nC @ 10V | 9400pF @ 50V | 10V | ±20V | |||
|
获得报价 |
3,636
有现货
|
Infineon Technologies | MOSFET P-CH 60V 80A TO-220 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V |