- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
13 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,020
有现货
|
Infineon Technologies | MOSFET N-CH 650V 19A VSON-4 | CoolMOS™ P7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 81W (Tc) | N-Channel | 650V | 19A (Tc) | 185 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | |||
|
获得报价 |
2,157
有现货
|
Infineon Technologies | MOSFET N-CH 650V 19A VSON-4 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 81W (Tc) | N-Channel | 650V | 19A (Tc) | 185 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | |||
|
获得报价 |
3,309
有现货
|
Infineon Technologies | MOSFET N-CH 650V 19A VSON-4 | CoolMOS™ P7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 81W (Tc) | N-Channel | 650V | 19A (Tc) | 185 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | |||
|
获得报价 |
1,718
有现货
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V | |||
|
获得报价 |
1,201
有现货
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,549
有现货
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
|
获得报价 |
850
有现货
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,623
有现货
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
获得报价 |
751
有现货
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V | |||
|
获得报价 |
873
有现货
|
Transphorm | MOSFET N-CH 650V 16A TO220AB | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V | |||
|
获得报价 |
2,641
有现货
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 81W (Tc) | N-Channel | 30V | 100A (Tc) | 3 mOhm @ 15A, 10V | 2.15V @ 1mA | 45.8nC @ 10V | 2822pF @ 12V | 4.5V, 10V | ±20V | |||
|
获得报价 |
754
有现货
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 81W (Tc) | N-Channel | 30V | 100A (Tc) | 3 mOhm @ 15A, 10V | 2.15V @ 1mA | 45.8nC @ 10V | 2822pF @ 12V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,442
有现货
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 81W (Tc) | N-Channel | 30V | 100A (Tc) | 3 mOhm @ 15A, 10V | 2.15V @ 1mA | 45.8nC @ 10V | 2822pF @ 12V | 4.5V, 10V | ±20V |