- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,996
有现货
|
Infineon Technologies | MOSFET N-CH 40V 17A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M2 | DIRECTFET™ M2 | 2.5W (Ta), 46W (Tc) | N-Channel | - | 40V | 17A (Ta) | 4.9 mOhm @ 43A, 10V | 4V @ 100µA | 72nC @ 10V | 2545pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,488
有现货
|
Infineon Technologies | MOSFET N-CH 150V 90A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M2 | DIRECTFET™ M2 | 2.7W (Ta), 45W (Tc) | N-Channel | - | 150V | 4.4A (Ta), 18A (Tc) | 56 mOhm @ 11A, 10V | 5V @ 100µA | 32nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,762
有现货
|
Infineon Technologies | MOSFET N-CH 150V 90A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M2 | DIRECTFET™ M2 | 2.7W (Ta), 45W (Tc) | N-Channel | - | 150V | 4.4A (Ta), 18A (Tc) | 56 mOhm @ 11A, 10V | 5V @ 100µA | 32nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,122
有现货
|
Infineon Technologies | MOSFET N-CH 150V 90A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M2 | DIRECTFET™ M2 | 2.7W (Ta), 45W (Tc) | N-Channel | - | 150V | 4.4A (Ta), 18A (Tc) | 56 mOhm @ 11A, 10V | 5V @ 100µA | 32nC @ 10V | 1360pF @ 25V | 10V | ±20V |