- 零件状态 :
- 供应商设备包 :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
19 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
1,236
有现货
|
Infineon Technologies | MOSFET N-CH 40V PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 94W (Tc) | N-Channel | - | 40V | 95A (Tc) | 3.3 mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,202
有现货
|
Infineon Technologies | MOSFET N CH 100V 11A PQFN5X6 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 11A (Ta), 58A (Tc) | 13.5 mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,333
有现货
|
Infineon Technologies | MOSFET N CH 100V 11A PQFN5X6 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 11A (Ta), 58A (Tc) | 13.5 mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,533
有现货
|
Infineon Technologies | MOSFET N CH 100V 11A PQFN 5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 11A (Ta), 58A (Tc) | 13.5 mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,196
有现货
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,167
有现货
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
681
有现货
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,680
有现货
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,850
有现货
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,012
有现货
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,002
有现货
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,341
有现货
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,745
有现货
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,023
有现货
|
Infineon Technologies | MOSFET N CH 40V 85A PQFN 5X6 | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 78W (Tc) | N-Channel | - | 40V | 85A (Tc) | 3.3 mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
2,703
有现货
|
Infineon Technologies | MOSFET N CH 40V 85A PQFN 5X6 | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 78W (Tc) | N-Channel | - | 40V | 85A (Tc) | 3.3 mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
1,339
有现货
|
Infineon Technologies | MOSFET N CH 40V 85A PQFN 5X6 | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 78W (Tc) | N-Channel | - | 40V | 85A (Tc) | 3.3 mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
2,573
有现货
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,524
有现货
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,154
有现货
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V |
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