晶体管 - FET，MOSFET - 单电池 - 深圳市恒森鑫电子有限公司

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图片	型号	价格	数量		库存	制造商	描述	系列	零件状态	包装材料	技术	工作温度	安装类型	包装/箱	供应商设备包	功耗（最大）	FET型	FET特性	漏极-源极电压（Vdss）	25°C时的电流-连续漏极（Id）	Rds开启（最大）@Id，Vgs	Vgs（th）（最大）@Id	栅极电荷（Qg）（最大）@Vgs	输入电容（Ciss）（最大）@Vds	驱动电压（最大Rds接通，最小Rds接通）	Vgs（最大值）
	TK25V60X,LQ	单位 $2.25	获得报价	PDF RFQ	2,491 有现货	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	DTMOSIV-H	Active	-	MOSFET (Metal Oxide)	150°C	Surface Mount	4-VSFN Exposed Pad	4-DFN-EP (8x8)	180W (Tc)	N-Channel	-	600V	25A (Ta)	135 mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40nC @ 10V	2400pF @ 300V	10V	±30V
	TK31V60X,LQ		获得报价	PDF RFQ	2,066 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A 5DFN	DTMOSIV-H	Active	Digi-Reel®	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	4-VSFN Exposed Pad	4-DFN-EP (8x8)	240W (Tc)	N-Channel	Super Junction	600V	30.8A (Ta)	98 mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65nC @ 10V	3000pF @ 300V	10V	±30V
	TK31V60X,LQ	单位 $5.20	获得报价	PDF RFQ	2,266 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A 5DFN	DTMOSIV-H	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	4-VSFN Exposed Pad	4-DFN-EP (8x8)	240W (Tc)	N-Channel	Super Junction	600V	30.8A (Ta)	98 mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65nC @ 10V	3000pF @ 300V	10V	±30V
	TK31V60X,LQ	单位 $2.39	获得报价	PDF RFQ	1,067 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A 5DFN	DTMOSIV-H	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	4-VSFN Exposed Pad	4-DFN-EP (8x8)	240W (Tc)	N-Channel	Super Junction	600V	30.8A (Ta)	98 mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65nC @ 10V	3000pF @ 300V	10V	±30V
	TK31E60X,S1X	单位 $5.37	获得报价	PDF RFQ	1,091 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-220	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	230W (Tc)	N-Channel	Super Junction	600V	30.8A (Ta)	88 mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65nC @ 10V	3000pF @ 300V	10V	±30V
	TK25E60X5,S1X	单位 $4.34	获得报价	PDF RFQ	1,389 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220AB	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	180W (Tc)	N-Channel	-	600V	25A (Ta)	140 mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60nC @ 10V	2400pF @ 300V	10V	±30V
	TK39N60X,S1F	单位 $6.78	获得报价	PDF RFQ	1,552 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 38.8A TO-247	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	270W (Tc)	N-Channel	Super Junction	600V	38.8A (Ta)	65 mOhm @ 12.5A, 10V	3.5V @ 1.9mA	85nC @ 10V	4100pF @ 300V	10V	±30V
	TK31N60X,S1F	单位 $5.65	获得报价	PDF RFQ	1,680 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-247	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	230W (Tc)	N-Channel	Super Junction	600V	30.8A (Ta)	88 mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65nC @ 10V	3000pF @ 300V	10V	±30V
	TK25N60X,S1F	单位 $4.41	获得报价	PDF RFQ	1,527 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-247	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	180W (Tc)	N-Channel	-	600V	25A (Ta)	125 mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40nC @ 10V	2400pF @ 300V	10V	±30V
	TK62N60X,S1F	单位 $10.59	获得报价	PDF RFQ	3,286 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 61.8A TO-247	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	400W (Tc)	N-Channel	Super Junction	600V	61.8A (Ta)	40 mOhm @ 21A, 10V	3.5V @ 3.1mA	135nC @ 10V	6500pF @ 300V	10V	±30V
	TK25A60X5,S5X	单位 $4.79	获得报价	PDF RFQ	719 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220SIS	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	25A (Ta)	140 mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60nC @ 10V	2400pF @ 300V	10V	±30V
	TK25N60X5,S1F	单位 $4.34	获得报价	PDF RFQ	2,939 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO247	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	180W (Tc)	N-Channel	-	600V	25A (Ta)	140 mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60nC @ 10V	2400pF @ 300V	10V	±30V
	TK25A60X,S5X	单位 $4.17	获得报价	PDF RFQ	846 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-3PN	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	25A (Ta)	125 mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40nC @ 10V	2400pF @ 300V	10V	±30V
	TK25E60X,S1X	单位 $4.17	获得报价	PDF RFQ	1,531 有现货	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220AB	DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	180W (Tc)	N-Channel	-	600V	25A (Ta)	125 mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40nC @ 10V	2400pF @ 300V	10V	±30V

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