- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 已选择过滤 :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,058
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 600V | 15A (Ta) | 300 mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
927
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
1,741
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO-3PN | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 170W (Tc) | N-Channel | - | 600V | 15A (Ta) | 300 mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
2,649
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
1,720
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-3PN | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 190W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
2,692
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-3PN | DTMOSII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 144W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
1,166
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13A (Ta) | 380 mOhm @ 6.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V |