- 系列 :
- 零件状态 :
- 输入电容（Ciss）（最大）@Vds :
11 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
2,871
有现货
|
GeneSiC Semiconductor | TRANS SJT 650V 16A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 330W (Tc) | - | 650V | 16A (Tc) (155°C) | 105 mOhm @ 16A | - | - | 1534pF @ 35V | - | - | ||
|
|
|
获得报价 |
3,289
有现货
|
GeneSiC Semiconductor | TRANS SJT 650V 15A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 172W (Tc) | - | 650V | 15A (Tc) (155°C) | 105 mOhm @ 15A | - | - | 1534pF @ 35V | - | - | ||
|
|
获得报价 |
2,415
有现货
|
GeneSiC Semiconductor | TRANS SJT 650V 8A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 200W (Tc) | - | 650V | 8A (Tc) (158°C) | 170 mOhm @ 8A | - | - | 720pF @ 35V | - | - | ||
|
|
获得报价 |
1,976
有现货
|
GeneSiC Semiconductor | TRANS SJT 650V 7A TO-257 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 80W (Tc) | - | 650V | 7A (Tc) (165°C) | 170 mOhm @ 7A | - | - | 720pF @ 35V | - | - | ||
|
|
|
获得报价 |
3,854
有现货
|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO276 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 125W (Tc) | - | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | - | - | 324pF @ 35V | - | - | ||
|
|
|
获得报价 |
621
有现货
|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 47W (Tc) | - | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | - | - | 324pF @ 35V | - | - | ||
|
|
|
获得报价 |
1,666
有现货
|
GeneSiC Semiconductor | TRANS SJT 600V 100A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-258-3, TO-258AA | TO-258 | 769W (Tc) | - | 600V | 100A (Tc) | 25 mOhm @ 50A | - | - | - | - | - | ||
|
|
获得报价 |
1,197
有现货
|
Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | HTMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP Exposed Pad | 8-CDIP-EP | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | ||
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|
获得报价 |
2,834
有现货
|
Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | HTMOS™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 225°C (TJ) | Through Hole | 4-SIP | 4-Power Tab | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | ||
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|
获得报价 |
1,098
有现货
|
GeneSiC Semiconductor | TRANS SJT 300V 9A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-46-3 | TO-46 | 20W (Tc) | - | 300V | 9A (Tc) | 240 mOhm @ 5A | - | - | - | - | - | ||
|
|
|
获得报价 |
2,120
有现货
|
GeneSiC Semiconductor | TRANS SJT 100V 9A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-46-3 | TO-46 | 20W (Tc) | - | 100V | 9A (Tc) | 240 mOhm @ 5A | - | - | - | - | - |
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