- Rds开启(最大)@Id,Vgs :
-
- 125 mOhm @ 28A, 20V (1)
- 155 mOhm @ 15A, 15V (1)
- 23 mOhm @ 37.5A, 10V (1)
- 29 mOhm @ 42A, 10V (1)
- 38 mOhm @ 500mA, 10V (1)
- 39 mOhm @ 35A, 15V (1)
- 41 mOhm @ 38A, 10V (1)
- 45 mOhm @ 29A, 10V (1)
- 52 mOhm @ 30A, 10V (1)
- 55 mOhm @ 26A, 10V (1)
- 59 mOhm @ 50A, 20V (1)
- 62 mOhm @ 24.5A, 10V (1)
- 63 mOhm @ 21A, 10V (1)
- 70 mOhm @ 21A, 10V (1)
- 78 mOhm @ 20A, 15V (1)
- 90 mOhm @ 20A, 15V (1)
- 95 mOhm @ 15A, 10V (1)
- 输入电容(Ciss)(最大)@Vds :
-
- 12560pF @ 100V (1)
- 1350pF @ 1000V (1)
- 1864pF @ 600V (1)
- 2250pF @ 1000V (1)
- 3000pF @ 100V (1)
- 3060pF @ 100V (1)
- 350pF @ 600V (1)
- 3672pF @ 1000V (1)
- 3750pF @ 100V (1)
- 3900pF @ 100V (1)
- 4200pF @ 100V (1)
- 6300pF @ 25V (1)
- 6420pF @ 100V (1)
- 660pF @ 600V (1)
- 7160pF @ 400V (1)
- 8300pF @ 25V (1)
- 8825pF @ 100V (1)
17 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,975
有现货
|
IXYS | MOSFET N-CH | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 890W (Tc) | N-Channel | - | 650V | 80A (Tc) | 38 mOhm @ 500mA, 10V | 5V @ 4mA | 140nC @ 10V | 8300pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,226
有现货
|
IXYS | MOSFET N-CH | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 780W (Tc) | N-Channel | - | 650V | 60A (Tc) | 52 mOhm @ 30A, 10V | 5V @ 4mA | 108nC @ 10V | 6300pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,545
有现货
|
Cree/Wolfspeed | ZFET SIC DMOSFET, 1700V VDS, RDS | C2M™ | Active | - | SiCFET (Silicon Carbide) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 520W (Tc) | N-Channel | - | 1700V | 72A (Tc) | 59 mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1000V | 20V | +25V, -10V | |||
|
获得报价 |
3,762
有现货
|
Cree/Wolfspeed | ZFET SIC DMOSFET, 1700V VDS, RDS | C2M™ | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 277W (Tc) | N-Channel | - | 1700V | 40A (Tc) | 125 mOhm @ 28A, 20V | 4V @ 10mA | 120nC @ 20V | 2250pF @ 1000V | 20V | +25V, -10V | |||
|
获得报价 |
3,504
有现货
|
Cree/Wolfspeed | ZFET 900V, 30 MOHM, G3 SIC MOSFE | C3M™ | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 149W (Tc) | N-Channel | - | 900V | 63A (Tc) | 39 mOhm @ 35A, 15V | 3.5V @ 11mA | 87nC @ 15V | 1864pF @ 600V | 15V | +15V, -4V | |||
|
获得报价 |
2,586
有现货
|
Cree/Wolfspeed | MOSFET N-CH 1200V 30.8A TO247-4 | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 119W (Tc) | N-Channel | - | 1200V | 30.8A (Tc) | 90 mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | 1350pF @ 1000V | 15V | +19V, -8V | |||
|
获得报价 |
1,137
有现货
|
ON Semiconductor | MOSFET N-CH 650V 75A TO247 | SuperFET® III | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 595W (Tc) | N-Channel | - | 650V | 75A (Tc) | 23 mOhm @ 37.5A, 10V | 4.5V @ 7.5mA | 222nC @ 10V | 7160pF @ 400V | 10V | ±30V | |||
|
获得报价 |
1,825
有现货
|
ON Semiconductor | MOSFET N-CH 650V 76A | FRFET®, SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 595W (Tc) | N-Channel | - | 650V | 76A (Tc) | 41 mOhm @ 38A, 10V | 5V @ 7.6mA | 298nC @ 10V | 12560pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,885
有现货
|
STMicroelectronics | MOSFET N-CH 650V 30A TO247-4L | MDmesh™ M5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 190W (Tc) | N-Channel | - | 650V | 30A (Tc) | 95 mOhm @ 15A, 10V | 5V @ 250µA | 71nC @ 10V | 3000pF @ 100V | 10V | ±25V | |||
|
获得报价 |
3,541
有现货
|
STMicroelectronics | MOSFET N CH 650V 42A TO247-4 | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 250W (Tc) | N-Channel | - | 650V | 42A (Tc) | 63 mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | 10V | ±25V | |||
|
获得报价 |
2,617
有现货
|
STMicroelectronics | MOSFET N-CH 600V 42A TO247-4 | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 300W (Tc) | N-Channel | - | 600V | 42A (Tc) | 70 mOhm @ 21A, 10V | 4V @ 250µA | 70nC @ 10V | 3060pF @ 100V | 10V | ±25V | |||
|
获得报价 |
2,626
有现货
|
STMicroelectronics | MOSFET N-CH 650V 84A | MDmesh™ M5 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 450W (Tc) | N-Channel | - | 650V | 84A (Tc) | 29 mOhm @ 42A, 10V | 5V @ 250µA | 204nC @ 10V | 8825pF @ 100V | 10V | ±25V | |||
|
获得报价 |
1,903
有现货
|
Cree/Wolfspeed | MOSFET N-CH 1000V 22A TO247-4L | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 83W (Tc) | N-Channel | - | 1000V | 22A (Tc) | 155 mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | 350pF @ 600V | 15V | ±15V | |||
|
获得报价 |
3,521
有现货
|
STMicroelectronics | MOSFET N-CH 600V 52A TO247-4 | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 350W (Tc) | N-Channel | - | 600V | 52A (Tc) | 55 mOhm @ 26A, 10V | 4V @ 250µA | 91nC @ 10V | 3750pF @ 100V | 10V | ±25V | |||
|
获得报价 |
3,701
有现货
|
STMicroelectronics | MOSFET N-CH 650V 58A TO-247-4 | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 330W (Tc) | N-Channel | - | 650V | 58A (Tc) | 45 mOhm @ 29A, 10V | 5V @ 250µA | 143nC @ 10V | 6420pF @ 100V | 10V | ±25V | |||
|
获得报价 |
2,578
有现货
|
Cree/Wolfspeed | 1000V, 65 MOHM, G3 SIC MOSFET | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | - | TO-247-4 | TO-247-4L | 113.5W (Tc) | N-Channel | - | 1000V | 35A (Tc) | 78 mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | 15V | +19V, -8V | |||
|
获得报价 |
1,951
有现货
|
STMicroelectronics | MOSFET N-CH 650V I2PAKFP | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 358W (Tc) | N-Channel | - | 650V | 49A (Tc) | 62 mOhm @ 24.5A, 10V | 4V @ 250µA | 93nC @ 10V | 3900pF @ 100V | 10V | ±25V |