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25°C时的电流-连续漏极(Id) :
Rds开启(最大)@Id,Vgs :
栅极电荷(Qg)(最大)@Vgs :
输入电容(Ciss)(最大)@Vds :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
12 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
PMFPB8040XP,115
获得报价
RFQ
1,118
有现货
Nexperia USA Inc. MOSFET P-CH 20V 2.7A HUSON6 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 485mW (Ta), 6.25W (Tc) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 102 mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6nC @ 4.5V 550pF @ 10V 1.8V, 4.5V ±12V
PMFPB8040XP,115
获得报价
RFQ
2,994
有现货
Nexperia USA Inc. MOSFET P-CH 20V 2.7A HUSON6 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 485mW (Ta), 6.25W (Tc) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 102 mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6nC @ 4.5V 550pF @ 10V 1.8V, 4.5V ±12V
PMFPB8040XP,115
获得报价
RFQ
1,017
有现货
Nexperia USA Inc. MOSFET P-CH 20V 2.7A HUSON6 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 485mW (Ta), 6.25W (Tc) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 102 mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6nC @ 4.5V 550pF @ 10V 1.8V, 4.5V ±12V
PMFPB6532UP,115
获得报价
RFQ
888
有现货
NXP USA Inc. MOSFET P-CH 20V 3.5A SOT1118 - Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 520mW (Ta), 8.3W (Tc) P-Channel Schottky Diode (Isolated) 20V 3.5A (Ta) 70 mOhm @ 1A, 4.5V 1V @ 250µA 6nC @ 4.5V 380pF @ 10V 1.8V, 4.5V ±8V
PMFPB6532UP,115
获得报价
RFQ
2,773
有现货
NXP USA Inc. MOSFET P-CH 20V 3.5A SOT1118 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 520mW (Ta), 8.3W (Tc) P-Channel Schottky Diode (Isolated) 20V 3.5A (Ta) 70 mOhm @ 1A, 4.5V 1V @ 250µA 6nC @ 4.5V 380pF @ 10V 1.8V, 4.5V ±8V
PMFPB6532UP,115
获得报价
RFQ
858
有现货
NXP USA Inc. MOSFET P-CH 20V 3.5A SOT1118 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 520mW (Ta), 8.3W (Tc) P-Channel Schottky Diode (Isolated) 20V 3.5A (Ta) 70 mOhm @ 1A, 4.5V 1V @ 250µA 6nC @ 4.5V 380pF @ 10V 1.8V, 4.5V ±8V
PMFPB6545UP,115
获得报价
RFQ
907
有现货
NXP USA Inc. MOSFET P-CH 20V 3.5A SOT1118 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 520mW (Ta), 8.3W (Tc) P-Channel Schottky Diode (Isolated) 20V 3.5A (Ta) 70 mOhm @ 1A, 4.5V 1V @ 250µA 6nC @ 4.5V 380pF @ 10V 1.8V, 4.5V ±8V
PMFPB6545UP,115
获得报价
RFQ
1,348
有现货
NXP USA Inc. MOSFET P-CH 20V 3.5A SOT1118 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 520mW (Ta), 8.3W (Tc) P-Channel Schottky Diode (Isolated) 20V 3.5A (Ta) 70 mOhm @ 1A, 4.5V 1V @ 250µA 6nC @ 4.5V 380pF @ 10V 1.8V, 4.5V ±8V
PMFPB6545UP,115
获得报价
RFQ
1,344
有现货
NXP USA Inc. MOSFET P-CH 20V 3.5A SOT1118 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 520mW (Ta), 8.3W (Tc) P-Channel Schottky Diode (Isolated) 20V 3.5A (Ta) 70 mOhm @ 1A, 4.5V 1V @ 250µA 6nC @ 4.5V 380pF @ 10V 1.8V, 4.5V ±8V
PMFPB8032XP,115
获得报价
RFQ
3,760
有现货
Nexperia USA Inc. MOSFET P-CH 20V 2.7A HUSON6 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 485mW (Ta), 6.25W (Tc) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 102 mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6nC @ 4.5V 550pF @ 10V 4.5V ±12V
PMFPB8032XP,115
单位
$0.68
获得报价
RFQ
2,191
有现货
Nexperia USA Inc. MOSFET P-CH 20V 2.7A HUSON6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 485mW (Ta), 6.25W (Tc) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 102 mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6nC @ 4.5V 550pF @ 10V 4.5V ±12V
PMFPB8032XP,115
单位
$0.24
获得报价
RFQ
1,312
有现货
Nexperia USA Inc. MOSFET P-CH 20V 2.7A HUSON6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 485mW (Ta), 6.25W (Tc) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 102 mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6nC @ 4.5V 550pF @ 10V 4.5V ±12V
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