- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
12 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,118
有现货
|
Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 1.8V, 4.5V | ±12V | |||
|
获得报价 |
2,994
有现货
|
Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 1.8V, 4.5V | ±12V | |||
|
获得报价 |
1,017
有现货
|
Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 1.8V, 4.5V | ±12V | |||
|
获得报价 |
888
有现货
|
NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
获得报价 |
2,773
有现货
|
NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
获得报价 |
858
有现货
|
NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
获得报价 |
907
有现货
|
NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
获得报价 |
1,348
有现货
|
NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
获得报价 |
1,344
有现货
|
NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
获得报价 |
3,760
有现货
|
Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 4.5V | ±12V | |||
|
获得报价 |
2,191
有现货
|
Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 4.5V | ±12V | |||
|
获得报价 |
1,312
有现货
|
Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 4.5V | ±12V |