- 零件状态 :
- 供应商设备包 :
- Rds开启（最大）@Id，Vgs :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
8 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
2,385
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | ||
|
|
|
获得报价 |
2,825
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | ||
|
|
|
获得报价 |
1,665
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | ||
|
|
|
获得报价 |
2,732
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | ||
|
|
获得报价 |
1,225
有现货
|
ON Semiconductor | MOSFET 2P-CH 20V 3.1A MICROFET | PowerTrench® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 700mW | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.1A | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 540pF @ 10V | ||
|
|
|
获得报价 |
761
有现货
|
ON Semiconductor | MOSFET 2P-CH 20V 3.1A MICROFET | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 700mW | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.1A | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 540pF @ 10V | ||
|
|
|
获得报价 |
3,699
有现货
|
ON Semiconductor | MOSFET 2P-CH 20V 3.1A MICROFET | PowerTrench® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 700mW | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.1A | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 540pF @ 10V | ||
|
|
|
获得报价 |
2,493
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V |
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