- 零件状态 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,727
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 1.5A 6TSOP | OptiMOS™ | Obsolete | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | |||
|
获得报价 |
2,418
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 1.5A 6TSOP | OptiMOS™ | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | |||
|
获得报价 |
1,411
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 1.5A 6TSOP | OptiMOS™ | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | |||
|
获得报价 |
2,395
有现货
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | - | Die | - | Die | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
获得报价 |
1,289
有现货
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | - | Die | - | Die | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
获得报价 |
2,284
有现货
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | - | Die | - | Die | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
获得报价 |
963
有现货
|
EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
获得报价 |
1,024
有现货
|
EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
获得报价 |
1,077
有现货
|
EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
获得报价 |
1,612
有现货
|
Infineon Technologies | MOSFET 2N-CH 20V 1.5A 6TSOP | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V |