6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,111
有现货
|
EPC | TRANS GAN 3N-CH 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | |||
|
获得报价 |
930
有现货
|
EPC | TRANS GAN 3N-CH 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | |||
|
获得报价 |
1,507
有现货
|
EPC | TRANS GAN 3N-CH 100V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | |||
|
获得报价 |
1,022
有现货
|
EPC | MOSFET 3 N-CH 100V 9BGA | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | |||
|
获得报价 |
727
有现货
|
EPC | MOSFET 3 N-CH 100V 9BGA | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | |||
|
获得报价 |
906
有现货
|
EPC | MOSFET 3 N-CH 100V 9BGA | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V |